(China (Mainland))
Product Summary
The 2SD718 is an NPN epitaxial silicon transistor.
Parametrics
2SD718 absolute maximum ratings: (1)Collector-Base Voltage VCBO: 120 V; (2)Collector-Emitter Voltage VCEO: 120 V; (3)Emitter-Base Voltage VEBO: 5 V; (4)Collector Current Ic: 10 A; (5)Base Current IB: 1 A; (6)Collector Power Dissipation (Tc=25℃) Pc: 80 W; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Range Tstg: -55 ~150℃.
Features
2SD718 features: (1)Recommended for 45~50W Audio Frequency; (2)Amplifier Output Stage; (3)Complementary to 2SB688.
Diagrams
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 2SD718 |
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2SD716 |
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2SD717 |
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2SD718 |
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2SD725 |
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Negotiable |
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2SD727 |
Other |
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Negotiable |
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2SD728 |
Other |
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Negotiable |
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