Product Summary

The 2SD998 is a Silicon NPN Power Transistor. The applications are High power amplifier applications and Recommended for 45~50W audio frequency amplifier output stage.

Parametrics

2SD998 absolute maximum ratings: (1)VCBO, Collector-base voltage Open emitter: 120 V; (2)VCEO Collector-emitter voltage Open base: 120 V; (3)VEBO Emitter-base voltage Open collector: 5 V; (4)IC Collector current: 10 A; (5)IB Base current: 1.0 A; (6)PC Collector dissipation TC=25℃: 80 W; (7)Tj Junction temperature: 150℃; (8)Tstg Storage temperature: -55~150℃.

Features

2SD998 features: (1)With TO-3PML package; (2)Complement to type 2SB778.

Diagrams

2SD998 block diagram

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