Product Summary

The BUK7535 is an N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. The BUK7535 is suitable for Automotive and general purpose power switching: 12 V and 24 V loads, Motors, lamps and solenoids.

Parametrics

BUK7535 absolute maximum ratings: (1)VDS drain-source voltage (DC): 55 V; (2)ID drain current (DC) Tmb =25℃; VGS =10V: 35 A; (3)Ptot total power dissipation Tmb =25℃: 85 W; (4)Tj junction temperature: 175℃; (5)RDSon drain-source on-state resistance: 70 mΩ.

Features

BUK7535 features: (1)TrenchMOS technology; (2)Q101 compliant; (3)175℃ rated; (4)Standard level compatible.

Diagrams

BUK7535 symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BUK7535-100A
BUK7535-100A
NXP Semiconductors
MOSFET RAIL PWR-MOS
Data Sheet
Negotiable 
BUK7535-100A,127
BUK7535-100A,127
NXP Semiconductors
MOSFET RAIL PWR-MOS
Data Sheet
0-1: $0.53
1-25: $0.49
25-100: $0.47
100-250: $0.42
BUK7535-55A,127
BUK7535-55A,127
NXP Semiconductors
MOSFET RAIL PWR-MOS
Data Sheet
0-1: $0.36
1-25: $0.33
25-100: $0.33
100-250: $0.31
BUK7535-55A
BUK7535-55A
NXP Semiconductors
MOSFET RAIL PWR-MOS
Data Sheet
Negotiable 
BUK7535-55
BUK7535-55
Other

Data Sheet
Negotiable