(China (Mainland))
Product Summary
The FQA36P15 is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA36P15 is well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Parametrics
FQA36P15 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -150 V; (2)ID Drain Current - Continuous (TC = 25℃): -36 A; Continuous (TC = 100°C): -25.5 A; (3)IDM Drain Current - Pulsed: -144 A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 1400 mJ; (6)IAR Avalanche Current: -36 A; (7)EAR Repetitive Avalanche Energy: 29.4 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (9)PD Power Dissipation (TC = 25℃): 294 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300℃.
Features
FQA36P15 features: (1)-36A, -150V, RDS(on) = 0.09Ω @VGS = -10 V; (2)Low gate charge ( typical 81 nC); (3)Low Crss ( typical 110pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQA36P15 |
Fairchild Semiconductor |
MOSFET 150V P-Channel QFET |
Data Sheet |
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FQA36P15_F109 |
Fairchild Semiconductor |
MOSFET 150V P-Channel |
Data Sheet |
Negotiable |
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