Product Summary

The HUF75344G3 is an N-Channel power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device HUF75344G3 is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. The HUF75344G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Parametrics

HUF75344G3 absolute maximum ratings: (1)Drain to Source Voltage, VDSS: 55 V; (2)Drain to Gate Voltage (RGS = 20kΩ), VDGR: 55 V; (3)Gate to Source Voltage, VGS: ± 20 V; (4)Drain Current Continuous, ID: 75A; (5)Power Dissipation, PD: 285W; (6)Operating and Storage Temperature, TJ, TSTG: -55 to 175℃.

Features

HUF75344G3 features: (1)75A, 55V; (2)Simulation Models: Temperature Compensated PSPICE and SABER Models; Thermal Impedance PSPICE and SABER Models Available; (3)Peak Current vs Pulse Width Curve; (4)UIS Rating Curve; (5)Related Literature.

Diagrams

HUF75344G3 symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
HUF75344G3
HUF75344G3

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Data Sheet

0-1: $1.60
1-25: $1.43
25-100: $1.29
100-250: $1.15
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