(China (Mainland))
Product Summary
The MJE13009 is a high voltage Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic package. It uses a Hollow Emitter structure to enhance switching speeds. The applications of the MJE13009 are electronic transformer for halogen lamps and switch mode power supplies.
Parametrics
MJE13009 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage (IB = 0): 400 V; (2)VCEV Collector-Emitter Voltage (VBE = -1.5 V): 700 V; (3)VEBO Emitter-Base Voltage (IC = 0): 9 V; (4)IC Collector Current: 12 A; (5)ICM Collector Peak Current (tp ≤ 10 ms): 25 A; (6)IB Base Current: 6 A; (7)IBM Base Peak Current (tp ≤ 10 ms): 12 A; (8)IE Emitter Current: 18 A; (9)IEM Emitter Peak Current: 36 A; (10)Ptot Total Power Dissipation at Tc ≤ 25℃: 110 W; (11)Tstg Storage Temperature: -65 to 150℃; (12)Tj Max. Operating Junction Temperature: 150℃.
Features
MJE13009 features: (1)stmicroelectronics preferred salestype; (2)high voltage capability; (3)minimum lot-to-lot spread for reliable operation; (4)low base-drive requirements; (5)very high switching speed fully characterized at 125℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJE13009 |
STMicroelectronics |
Transistors Bipolar (BJT) TO-220 NPN FASTSW PW |
Data Sheet |
Negotiable |
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 |
MJE13009F |
Other |
|
Data Sheet |
Negotiable |
|
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|
MJE13009G |
ON Semiconductor |
Transistors Bipolar (BJT) 12A 400V 100W NPN |
Data Sheet |
Negotiable |
|
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|
MJE13009L |
Other |
|
Data Sheet |
Negotiable |
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