(China (Mainland))
Product Summary
The STB20NK50Z is an N-channel SuperMESH power MOSFET. The STB20NK50Z is obtained through an extreme optimization of ST’s well established stripbased PowerMESH. layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh. products. The applications of the STB20NK50Z include high current, high speed switching, ideal for off-line power supplies, adaptors and PFC.
Parametrics
STB20NK50Z absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 500 V; (2)Drain-gate Voltage (RGS = 20 kW), VDGR: 500 V; (3)Gate- source Voltage, VGS: ±30 V; (4)Drain Current (continuos) at TC = 25℃, ID: 20 A; (5)Drain Current (continuos) at TC = 100℃, ID: 10A; (6)Drain Current (pulsed), IDM: 64A; (7)Total Dissipation at TC = 25℃, PTOT: 190W; (8)Derating Factor: 1.51 W/℃; (9)Gate source ESD(HBM-C=100pF, R=1.5KW), VESD(G-S): 4000 V; (10)Peak Diode Recovery voltage slope, dv/dt: 4.5 V/ns; (11)Operating Junction Temperature, Tj, Tstg: -55 to 150℃.
Features
STB20NK50Z features: (1)typical RDS(on) = 0.23 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
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STB20NK50Z-S |
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Negotiable |
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STB20NK50ZT4 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH |
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