(China (Mainland))
Product Summary
The IRFPS43N50K is a Power MOSFET.
Parametrics
IRFPS43N50K absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 47A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 29 A; (3)IDM Pulsed Drain Current: 190A; (4)PD @TC = 25℃ Power Dissipation: 540 W; (5)Linear Derating Factor: 4.3 W/℃; (6)VGS Gate-to-Source Voltage: ± 30 V; (7)dv/dtPeak Diode Recovery dv/dt: 9.0 V/ns; (8)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150℃; (9)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).
Features
IRFPS43N50K features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Low RDS(on).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRFPS43N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 47 Amp |
Data Sheet |
|
|
||||||||||||
|
IRFPS43N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 47 Amp |
Data Sheet |
|
|
||||||||||||
